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We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical
Benkeser reduction using lithium and ethylenediamine.
In summary, we demonstrate a facile and novel method for producing in situ nitrogen-doped rGO during reduction of GO with Li and EDA at room temperature. A high quality n-type Li–rGOFET was produced by dipping a GO FET into Li–EDA solution at room temperature. This is a suitable method for the mass production of n-type graphene electronics at room temperature in the near future. The National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (Grant No. 2006-0050684) supported this work.